"high side chopper" igbt sot-227 (ultrafast igbt), 50 a GB50NA120UX vishay semiconductors document number: 93101 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 features ? npt generation v igbt technology ? square rbsoa ?hexfred ? clamping diode ?positive v ce(on) temperature coefficient ? fully isolated package ? speed 8 khz to 60 khz ? very low internal inductance ( ? 5 nh typical) ? industry standard outline ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec benefits ? designed for increased operating efficiency in power conversion: ups, smps, we lding, induction heating ? easy to assemble and parallel ? direct mounting on heatsink ? plug-in compatible with other sot-227 packages ? low emi, requires less snubbing product summary v ces 1200 v i c dc 50 a at 92 c v ce(on) typical at 50 a, 25 c 3.22 v s ot-227 absolute maximum ratings parameter symbol test conditions max. units collector to em itter voltage v ces 1200 v continuous coll ector current i c t c = 25 c 84 a t c = 80 c 57 pulsed collector current i cm 150 clamped inductive load current i lm 150 diode continuous forward current i f t c = 25 c 76 t c = 80 c 52 gate to emitter voltage v ge 20 v power dissipa tion, igbt p d t c = 25 c 431 w t c = 80 c 242 power dissipation, diode p d t c = 25 c 278 t c = 80 c 156 rms isolation voltage v isol any terminal to case, t = 1 min 2500 v
GB50NA120UX vishay semiconductors "high side chopper" igbt sot-227 (ultrafast igbt), 50 a www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93101 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units collector to em itter breakdown voltage v br(ces) v ge = 0 v, i c = 1 ma 1200 - - v collector to em itter voltage v ce(on) v ge = 15 v, i c = 25 a - 2.46 - v ge = 15 v, i c = 50 a - 3.22 2.80 v ge = 15 v, i c = 25 a, t j = 125 c - 2.84 3.60 v ge = 15 v, i c = 50 a, t j = 125 c - 3.78 3.0 gate threshold voltage v ge(th) v ce = v ge , i c = 500 a 4 5 4 temperature coefficient of threshold voltage v ge(th) / ? t j v ce = v ge , i c = 1 ma (25 c to 125 c) - - 10 - mv/c collector to emitter leakage current i ces v ge = 0 v, v ce = 1200 v - 6 50 a v ge = 0 v, v ce = 1200 v, t j = 125 c - 0.7 2.0 ma diode reverse breakdown voltage v br i r = 1 ma 1200 - - v diode forward voltage drop v fm i c = 25 a, v ge = 0 v - 1.99 2.42 v i c = 50 a, v ge = 0 v - 2.53 3.00 i c = 25 a, v ge = 0 v, t j = 125 c - 1.96 2.30 i c = 50 a, v ge = 0 v, t j = 125 c - 2.66 3.08 diode reverse leakage current i rm v r = v r rated - 4 50 a t j = 125 c, v r = v r rated - 0.6 3 ma gate to emitter leakage current i ges v ge = 20 v - - 200 na switching characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units total gate charge (turn-on) q g i c = 50 a, v cc = 600 v, v ge = 15 v - 400 - nc gate to emitter charge (turn-on) q ge -43- gate to collector charge (turn-on) q gc - 187 - turn-on switching loss e on i c = 50 a, v cc = 600 v, v ge = 15 v, r g = 5 ?? l = 500 h, t j = 25 c energy losses include tail and diode recovery (see fig. 18) -2.72- mj turn-off switching loss e off -1.11- total switching loss e tot -3.83- turn-on switching loss e on i c = 50 a, v cc = 600 v, v ge = 15 v, r g = 5 ?? l = 500 h, t j = 125 c -3.94- turn-off switching loss e off -2.31- total switching loss e tot -6.25- turn-on delay time t d(on) - 191 - ns rise time t r -53- turn-off delay time t d(off) - 223 - fall time t f - 143 - reverse bias safe operating area rbsoa t j = 150 c, i c = 150 a, r g = 22 ?? v ge = 15 v to 0 v, v cc = 900 v, v p = 1200 v fullsquare diode reverse recovery time t rr i f = 50 a, di f /dt = 200 a/s, v r = 200 v - 129 161 ns diode peak reverse current i rr -1114a diode recovery charge q rr - 700 1046 nc diode reverse recovery time t rr i f = 50 a, di f /dt = 200 a/s, v r = 200 v, t j = 125 c - 208 257 ns diode peak reverse current i rr -1721a diode recovery charge q rr - 1768 2698 nc
GB50NA120UX "high side chopper" igbt sot-227 (ultrafast igbt), 50 a vishay semiconductors document number: 93101 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 fig. 1 - maximum dc igbt collector current vs. case temperature fig. 2 - igbt reverse bias soa t j = 150 c, v ge = 15 v fig. 3 - typical igbt collector current characteristics fig. 4 - typical igbt zero gate voltage collector current thermal and mechanical specifications parameter symbol min. typ. max. units maximum junction and storage temperature range t j , t stg - 40 - 150 c thermal resistance, junction to case igbt r thjc - - 0.29 c/w diode - - 0.45 thermal resistance, case to sink per module r thcs -0.05- mounting torque, 6-32 or m3 screw - - 1.3 nm weight -30-g allowable case temperature (c) i c - continuous collector current (a) 0 102030405060708090 0 160 100 120 140 20 40 60 80 i c (a) v ce (v) 1 10 100 1000 10 000 0.01 0.1 1 1000 10 100 i c (a) v ce (v) 024 8 13 6 57 0 200 25 50 100 75 150 125 175 t j = 125 c t j = 25 c i ces (ma) v ces (v) 100 300 500 700 900 1100 0.0001 10 1 0.01 0.1 0.001 t j = 125 c t j = 25 c
GB50NA120UX vishay semiconductors "high side chopper" igbt sot-227 (ultrafast igbt), 50 a www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93101 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 fig. 5 - typical igbt threshold voltage fig. 6 - typical igbt colle ctor to emitter voltage vs. junction temperature, v ge = 15 v fig. 7 - maximum dc forward current vs. case temperature fig. 8 - typical diode forward characteristics fig. 9 - typical igbt energy loss vs. i c t j = 125 c, l = 500 h, v cc = 600 v, r g = 5 ? , v ge = 15 v fig. 10 - typical igbt switching time vs. i c t j = 125 c, l = 500 h, v cc = 600 v, r g = 5 ? , v ge = 15 v v geth (v) i c (ma) 0.0002 0.0004 0.0006 0.0008 0.001 3.0 5.5 4.0 4.5 5.0 3.5 t j = 25 c t j = 125 c v ce (v) t j (c) 10 50 90 30 70 130 110 150 2 6 4 5 3 100 a 50 a 25 a allowable case temperature (c) i f - continuous forward current (a) 010 30 50 20 40 60 70 80 0 160 100 120 140 20 40 60 80 i f (a) v fm (v) 01 3 2 456 0 200 25 75 100 150 125 175 50 t j = 125 c t j = 25 c energy (mj) i c (a) 10 20 30 40 50 0 4 2 3 1 e off e on switching time (ns) i c (a) 010 50 30 40 20 60 10 1000 100 t d(off) t d(on) t f t r
GB50NA120UX "high side chopper" igbt sot-227 (ultrafast igbt), 50 a vishay semiconductors document number: 93101 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 fig. 11 - typical igbt energy loss vs. r g t j = 125 c, i c = 50 a, l = 500 h, v cc = 600 v, v ge = 15 v fig. 12 - typical igbt switching time vs. r g t j = 125 c, l = 500 h, v cc = 600 v, i c = 50 a, v ge = 15 v fig. 13 - typical t rr diode vs. di f /dt v r = 200 v, i f = 50 a fig. 14 - typical i rr diode vs. di f /dt v r = 200 v, i f = 50 a fig. 15 - typical q rr diode vs. di f /dt, v r = 200 v, i f = 50 a energy (mj) r g ( ) 0 1020304050 0 12 6 10 8 4 2 e on e off switching time (ns) r g ( ) 02030 10 40 50 10 100 1000 t d(on) t d(off) t f t r t rr (ns) di f /dt (a/s) 100 1000 70 250 110 150 190 210 230 90 130 170 t j = 125 c t j = 25 c i rr (a) di f /dt (a/s) 100 1000 0 40 10 20 30 35 5 15 25 t j = 125 c t j = 25 c q rr (nc) di f /dt (a/s) 100 1000 400 2650 900 1400 1900 2400 2150 650 1150 1650 t j = 125 c t j = 25 c
GB50NA120UX vishay semiconductors "high side chopper" igbt sot-227 (ultrafast igbt), 50 a www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93101 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 fig. 16 - maximum thermal impedance z thjc characteristics (igbt) fig. 17 - maximum thermal impedance z thjc characteristics (diode) 0.001 0.1 0.01 1 0.00001 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance junction to case (c/w) 10 1 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 dc 0.001 0.1 0.01 1 0.00001 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance junction to case (c/w) 10 1 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 dc
GB50NA120UX "high side chopper" igbt sot-227 (ultrafast igbt), 50 a vishay semiconductors document number: 93101 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 7 fig. 18a - clamped inductive load test circuit fig. 18b - pulsed collector current test circuit fig. 19a - switching loss test circuit fig. 19b - switching loss waveforms test circuit * driver same type as d.u.t.; v c = 80 % of v ce(max) * note: due to the 50 v power supply, pulse width and inductor will increase to obtain id 50 v 1000 v d.u.t. l v c * 2 1 r g v cc d.u.t. r = v cc i cm + - l diode clamp/ d.u.t. d.u.t./ driver - 5 v + - r g v cc + - t = 5 s t d(on) t f t r 90 % t d(off) 10 % 90 % 10 % 5 % v c i c e on e off e ts = (e on + e off ) 1 2 3
GB50NA120UX vishay semiconductors "high side chopper" igbt sot-227 (ultrafast igbt), 50 a www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93101 8 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 ordering information table circuit configuration links to related documents dimensions www.vishay.com/doc?95036 packaging information www.vishay.com/doc?95037 1 - insulated gate bipolar transistor (igbt) 2 - b = igbt generation 5 3 - current rating (50 = 50 a) 4 - circuit configuration (n = high side chopper) 5 - package indicator (a = sot-227) 6 - voltage rating (120 = 1200 v) 8 - x = f/w hexfred ? diode 7 - speed/type (u = ultrafast igbt) device code 5 13 24 678 g b 50 n a 120 u x 3 1 4 2
document number: 95036 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 28-aug-07 1 sot-227 outline dimensions vishay semiconductors dimensions in millimeters (inches) notes ? dimensioning and toleranc ing per ansi y14.5m-1982 ? controlling dime nsion: millimeter 38.30 (1.508) 37.80 (1.488) -a- 4 12 3 12.50 (0.492) 7.50 (0.295) ? 4.40 (0.173) ? 4.20 (0.165) 30.20 (1.189) 29.80 (1.173) 15.00 (0.590) 6.25 (0.246) 25.70 (1.012) 25.20 (0.992) -b- r full chamfer 2.00 (0.079) x 45 2.10 (0.082) 1.90 (0.075) 8.10 (0.319) 7.70 (0.303) 4 x 2.10 (0.082) 1.90 (0.075) -c- 0.12 (0.005) 12.30 (0.484) 11.80 (0.464) mmm 0.25 (0.010) ca b 4 x m4 nuts
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
|
